Speaker: Professor Jeongwon Park

Ph.D., P.Eng., SMIEEE, SMNAI, Associate Professor, University of Nevada, Reno

In-Person Meeting. Register: Here

Energy-efficiency and Performance Innovation of Chips with 2-Dimensional Materials (EPIC 2-D Materials) and Applications

Figure: (a) Cross-sectional view of a cylindrical gate-all-around (GAA) WSe2 NCFET (b) the capacitance model, where the total equivalent capacitance of the 2D FET (CMOS) and FE layer (PZT) capacitance (CFE) are in a series combination and VG acts as the effective gate voltage of the FET including PZT. (c) schematic diagram of GAA WSe2 NCFET

Figure: (d) schematic diagram of the MoS2 negative capacitance FET

The rapid development of the nanoelectronic industry over the past decades has relied on the process of transistor scaling to provide significant improvements to transistor performance at a reduced cost. Multiple directions have been pursued to extend the semiconductor industry’s growing trend, including searching for new material systems, designing new transistor structures, demonstrating new functionalities, and developing new applications.

The semiconductor chip has two main elements: active devices (i.e., transistors) and interconnects.

As for active devices, new 2-D materials (MoS2, WS2, BN, etc.) are all aggressively studied to realize high energy efficiency and memory/logic functions for system compactness. Since the discovery of graphene in 2004, researchers have focused on layer-structured materials and their applications in electron devices.

This talk will present the current status and possible application developments in nanoelectronics and nanomaterials. After a brief introduction, the general nanoelectronics and 2D materials for device applications are discussed. The technical challenges of 2D materials are discussed. This talk will introduce various technologies based on 2D materials and discuss possible applications. In addition, traditional silicon-based devices and nanotechnology-enabled high-performance devices will be discussed.
Read More: Current Prospects and Challenges in Negative-Capacitance Field-Effect Transistors

About the Author:

Dr. Jeongwon Park joined the Department of Electrical and Biomedical Engineering at the University of Nevada, Reno, NV, USA, as an Associate Professor in July 2019.

Prior to that, he was an Associate Professor at the School of Electrical Engineering and Computer Science at the University of Ottawa, Canada (2016-2021, currently Adjunct Professor) and a scientist at SLAC National Accelerator Laboratory, Stanford University, USA (2014 -2016).

For six years (2008-2014), he served as a senior technologist to support the corporate chief technology officer (CTO) and business units at Applied Materials, USA. In addition, he has been a guest researcher at the Lawrence Berkeley National Laboratories (2005-2008), an adjunct professor in the Department of Electrical Engineering at Santa Clara University (2009-2016), and a visiting scholar in the Department of Electrical Engineering at Stanford University, CA, USA (2013-2014).

He received his Ph.D. (2008) in materials science and engineering from the University of California, San Diego, USA. He is a senior member of IEEE and the National Academy of Inventors.

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1:30 — 2:00 PM Optional Covalent Lab Tour – See notes

This tour is open to the public; – however – competitors will not be permitted to tour the lab.

=> If you sign up for the tour – your employer and email information will shared with Covalent Metrology.

=> Signing up for the tour when you register on Eventbrite will not guarantee you a spot on August 22 tour. The number of people that day will be limited.

Overflow – may be accommodated on future tours.

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