Speakers

Plenary Speakers

	Relaxor-PT Single Crystals: There and Back Again Thomas R. SHROUT The Pennsylvania State University, USA
	The New Era of Correlated Electron Devices Carlos Paz de ARAUJO University of Colorado-Colorado Springs, and Symetrix Corporation, USA
	Nonclassical Materials and Processing Toward Technology Innovation Kazumi KATO National Institute of Advanced Industrial Science and Technology (AIST), Japan
	Cooperative Function in Atomically Precise Nanoscale Assemblies Paul S. WEISS University of California, Los Angeles, USA
	Mapping Electric Dipole Moments in Oxide Ferroelectrics Chunlin JIA Institute of Microstructure Research and Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich, Germany, and Xi’an Jiaotong University, China
	Next-Generation Ferroelectric Memories Based on X:HfO2 Stefan MUELLER NaMLab gGmbH, Germany

Invited Speakers

Dinesh AGRAWAL, Penn state University, USA
Koichi BANNO, Murata, Japan
Nazanin BASSIRI-GHARB, Georgia Institute of Technology, USA
Turan BIROL, Rutgers University, USA
John DANIELS, The University of New South Wales (UNSW), Australia
Sandwip DEY, Arizona State University, USA
Shuxiang DONG, Peking University, China
Steve DUNN, Queen Mary University of London (SEMS-QMUL), UK
Lukas ENG, Dresden University of Technology, Germany
Donglei Emma FAN, University of Texas at Austin, USA
Hiroshi FUNAKUBO, Tokyo Institute of Technology, Japan
Alexei GRUVERMAN, University of Nebraska-Lincoln, USA
Yoshikazu HISHINUMA, Fujifilm, Japan
Dean HO, University of California, Los Angeles, USA
Timothy J. JACKSON, University of Birmingham, UK
Heli JANTUNEN, University of Oulu Finland, Finland
Jacob JONES, North Carolina State University, USA
Thottam KALKUR, University of Colorado-Colorado Springs, USA
Ram KATIYAR, University of Puerto Rico, Puerto Rico
Geunhee LEE, University of Texas at Dallas, USA
Jaichan LEE, Sungkyunkwan University, Korea
Igor LEVIN, National Institute of Standards and Technology (NIST), USA
Jing-Feng LI, Tsinghua University, China
Leong Chew LIM, Microfine Materials Technologies, Singapore
Ming LIU, Xi’an Jiaotong University, China
Haosu LUO, Shanghai Institute of Ceramics, Chinese Academy of Sciences, China
Barbara MALIC, Josef Stefan Institute, Slovenia
Lane MARTIN, University of California-Berkeley, USA
Riad NECHACHE, Institut national de la recherche scientifique (INRS), Canada
Nagaya OKADA, Honda Electronics Co., Ltd. Japan
Xiaoqing PAN, University of Michigan, USA
Lucian PINTILIE, National Institute for Materials Physics, Romania
Roger PROKSCH, Asylum Research, Oxford Instruments, UK
Wei REN, Xi’an Jiaotong University, China
Christian RODENBÜCHER, Institute of Solid State Research Forschungszentrum Jülich, Germany
Brian RODRIGUEZ, UCD, Ireland
Jürgen RÖDEL, TU-Darmstadt, Germany
Uwe SCHROEDER, NaMLabs, Germany
Nava SETTER, EPFL, Switzerland
Vladimir SHUR, Ural Federal University, Russia
Tomas SLUKA, EPFL, Switzerland
Igor STOLICHNOV, EPFL, Switzerland
Wanxin SUN, Bruker, Singapore
Susan TROLIER-McKINSTRY, The Pennsylvania State University, USA
Takaaki TSURUMI, Tokyo Institute of Technology, Japan
Rama VASUDEVAN, ORNL, USA
Satoshi WADA, University of Yamanashi, Japan
Hong WANG, Xi’an Jiaotong University, China
John WANG, National University of Singapore
Junling WANG, Nanyang Technological University, Singapore
In Kyeong YOO, Samsung, South Korea
Qifa ZHOU, University of Southern California, USA