Multilevel memristive switching devices for efficient analog In-memory computing in AI applications
Speaker: Dr. Glenn Ning Ge, CEO of TetraMem
In-Person Meeting. Register: Here
Date and Time
Thurs May 23
11:30am: Networking & Pizza
Noon-1PM: Seminar
Cost: $4 to $6
Location
EAG Laboratories – 810 Kifer Road, Sunnyvale
==> Use corner entrance: Kifer Road / San Lucar Court
==> Do not enter at main entrance on Kifer Road
Multilevel memristive switching devices for efficient analog In-memory computing in AI applications
The von Neumann architecture’s intrinsic bottleneck in data transfer between processor and memory units hinders performance as data sets continue to grow. TetraMem’s memristive devices-based analog in-memory computing significantly boosts throughput and energy efficiency in deep learning.
Our approach utilizes pre-trained synaptic weights from cloud-based training, directly programming them into computing memristors/multi-level RRAMs made with nanometer thin-films for edge deployment and enabling post-tuning to accommodate specific scenarios. High-precision programmability ensures uniform performance across memristive networks by necessitating numerous distinguishable conductance levels in each device. This advancement benefits applications like neural network training and inference computing.
By achieving stable 8 bits and above multi-levels conductance in individual memristor devices (up to 11 bits/cell, as featured in Nature), we enable monolithically integrated semiconductor chips featuring large crossbar arrays on complementary metal-oxide-semiconductor (CMOS) circuits in the commercial foundry, suitable for diverse AI applications. Our arbitrary precision computing based on analog computing work was recently published in Science.
About the Author:
Dr. Glenn Ning Ge is the CEO and co-founder of TetraMem, a leading Silicon Valley startup. With a decade of experience in the semiconductor sector, he has contributed to numerous product innovations. He boasts around 800 global patent filings, stemming from over 300 US/PCT patent families, many of which are now in mass production.
Dr. Ge holds three Master’s degrees, including an MBA from the University of Michigan’s Ross School of Business, and a Ph.D. in Electrical Engineering from Nanyang Technological University, Singapore. He is a former Board Member of the SFBA IEEE Nanotechnology Council.
