TITLE: 2D Materials Advantages and Challenges Towards Applications

SPEAKER:

Ching-Hua (Fiona) Wang, PhD. Student

Electrical Engineering Department, Stanford University

Tuesday, August 15, 2017  11:30 AM – 1:00  pm

Texas Instruments (TI) Auditorium E-1
2900 Semiconductor Drive
Santa Clara, CA  map

Cost $6, discount for IEEE Members, Students & Unemployed. Please register here.

ABSTRACT:

Two-dimensional (2D) materials present unique opportunities for next generation ultra-thin electronics. However, practical 2D devices can only be realized after overcoming key challenges: contact resistance, stable doping, and uniform growth.
In this talk I will highlight the recent research our group has implemented to improve contact and doping in BP and MoS2 transistors.   I will then show our work beyond transistor applications using 2D materials, such as graphene-Cu interconnects and hBN-RRAM, that are promising for three-dimensional integrated electronics.

• 11:30 am – Registration & light lunch (pizza & drinks)
• Noon – Presentation & Questions/Answers
• 1:00 pm – Adjourn