Santa Clara Valley-San Francisco Chapter of Electron Devices Society (Silicon Valley, California)

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IEEE-EDS March Seminar: Wide Bandgap Devices Enabling High Power and High Frequency Electronics

Speaker: Professor Srabanti Chowdhury, Stanford University

Friday, March 13, 2020 at 11:45AM – 1PM

Texas Instruments Conference Center
2900 Semiconductor Dr, Building E, Santa Clara, CA 95051
FREE PIZZA PROVIDED

Register Here: https://www.surveymonkey.com/r/R7VKQ3M

Abstract:
We live in extremely exciting times, often identified as the age of the fourth industrial revolution. With electrification at every level, we are witnessing the most significant transformation of transportation since the internal combustion engine. Renewable energy is now a reality. IoT with the ever-expanding need for sensors and low power electronics is changing our lives dramatically. Robotics and autonomous vehicles are upon us. Both new and existing applications are demanding physical electronics solutions with new materials, devices and heterogeneous integration to drive these innovations to their full potential.

Wide-bandgap (WBG) semiconductors present a pathway to enable much of these electronics with higher efficiency and newer functionalities. Semiconductor devices with higher power density have unprecedented value in both power and high frequency electronics. Reducing conversion losses is not only critical for minimizing consumption of limited resources, it simultaneously enables new compact and reduced weight solutions, the basis for a new industry offering increased power conversion performance at reduced system cost. Equally importantly, GaN has opened the door to other ultra-wide bandgap materials such as Diamond, Aluminum Nitride and Gallium Oxide.

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