Santa Clara Valley-San Francisco Chapter of Electron Devices Society (Silicon Valley, California)

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Welcome to Electron Devices Society–Santa Clara Valley/San Francisco Chapter

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NOTE: The March seminar is Webex ONLY

IEEE-EDS March Seminar: Wide Bandgap Devices Enabling High Power and High Frequency Electronics (Webex Only)

Speaker: Professor Srabanti Chowdhury, Stanford University

Friday, March 13, 2020 at 11:45AM – 1PM

Webex Only: Click Here to Attend

Register Here: https://www.surveymonkey.com/r/R7VKQ3M

Abstract:
We live in extremely exciting times, often identified as the age of the fourth industrial revolution. With electrification at every level, we are witnessing the most significant transformation of transportation since the internal combustion engine. Renewable energy is now a reality. IoT with the ever-expanding need for sensors and low power electronics is changing our lives dramatically. Robotics and autonomous vehicles are upon us. Both new and existing applications are demanding physical electronics solutions with new materials, devices and heterogeneous integration to drive these innovations to their full potential.

Wide-bandgap (WBG) semiconductors present a pathway to enable much of these electronics with higher efficiency and newer functionalities. Semiconductor devices with higher power density have unprecedented value in both power and high frequency electronics. Reducing conversion losses is not only critical for minimizing consumption of limited resources, it simultaneously enables new compact and reduced weight solutions, the basis for a new industry offering increased power conversion performance at reduced system cost. Equally importantly, GaN has opened the door to other ultra-wide bandgap materials such as Diamond, Aluminum Nitride and Gallium Oxide.

Speaker Bio:
Srabanti Chowdhury (George and Ida Mary Hoover faculty fellow, Gabilan fellow) is an associate professor of Electrical Engineering (EE) at Stanford. She received her masters and PhD in Electrical engineering from UCSB in 2008 and 2010 respectively. Her research focuses on wideband gap (WBG) materials and device engineering for energy efficient and compact system architecture for power electronics, and RF applications. Besides Gallium Nitride, her group is exploring Diamond for various electronic applications. She received the DARPA Young Faculty Award, NSF CAREER and AFOSR Young Investigator Program (YIP) in 2015. In 2016 she received the Young Scientist award at the International Symposium on Compound Semiconductors (ISCS). She became a senior member of IEEE in 2017, and NAE Frontiers of Engineering Alumni in 2019. She has been named as a Sloan Research Fellow in 2020 in Physics for her research contribution.

Among her various synergistic activities, she serves as the member of two committees under IEEE Electron Device Society (Compound Semiconductor Devices & Circuits Committee Members and Power Devices and ICs Committee). She has served the IEEE International Electron Devices Meeting (IEDM) technical subcommittee on Power Devices & Compound Semiconductor and High-Speed Devices (PC) sub-committee in 2016 and 2017. She was the PC subcommittee chair for IEDM-2018 and continues to serve the IEDM executive committee.  Her work has produced over 80 journal papers, 100 conference presentations, and 20 issued patents.

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