The Nanosheet Transistor Is the Next (and Maybe Last) Step in Moore’s Law

Nanosheet devices are scheduled for the 3-nanometer node as soon as 2021

Image: IBM

The Shape of Things to Come: Nanosheet field-effect transistors flow current through multiple stacks of silicon that are completely surrounded by the transistor gate. The design reduces avenues for current to leak through and boosts the amount of current the device can drive.

The modern microprocessor is among the world’s most complex systems, but at its heart is a very simple, and we think beautiful, device: the transistor

Leave a Reply

Your email address will not be published. Required fields are marked *