Keynote presentations will be held on Tuesday, June 26
Alan Mantooth, University of Arkansas
Emerging Trends in Wide Bandgap Power Electronics
Economy and performance are benefits that come with high power density power electronics, just as in the case of VLSI electronics. High density power electronics require the heterogeneous integration of disparate technologies including power semiconductor devices, driver, protection and control circuitry, passives and voltage isolation techniques into single modules. One of the keys to advancing power electronic integration has been the commercial reality of wide bandgap power semiconductor devices made from silicon carbide and gallium nitride. The ability to design and manufacture wide bandgap integrated circuits as drivers, controllers, and protection circuitry allows them to be packaged in close proximity to the power device die to minimize parasitics that would adversely impact system performance. These impacts include excessive ringing, noise generation, power loss, and, potentially, self-destruction. This talk will describe emerging trends in silicon carbide analog and mixed-signal IC design for power electronic applications. Advanced 3D packaging techniques driven by multi-objective optimization techniques will also be described.