“A Unified Compact Model for Generic Heterostructure HEMTs” by Professor Xing Zhou, Nanyang Technological University, Singapore. IEEE Distinguished Lecturer.

Date:  November 30, 2012 (Friday)
Time:  5:15 pm – 6:00 pm
Venue:  PSDC, 1 Jalan Sultan Azlan Shah, 11900 Bayan Lepas, Penang, Malaysia

Abstract

III-V channel field-effect transistors (FETs), such as GaN-based high electron mobility transistors (HMETs), have emerged as promising candidates for future generation high-speed, high-frequency, high-voltage, and high-power ULSI applications.  This talk presents a unified compact model for generic heterostructure HMETs.  It is based on unified regional modeling (URM) of the 2-dimensional electron gas (2DEG) charge density, including the two lowest subbands of the triangular well in the active region, and extending to the subthreshold region of operation in a single-piece formulation.  The 2DEG charge density model is adopted in the surface-potential based URM (Xsim) for bulk/multigate MOSFETs.  The developed model has been validated with the exact numerical solutions for a wide range of devices and verified with experimental data of metal-insulator-semiconductor (MIS) HEMT devices.

Speaker

Dr. Xing Zhou received the B.E. degree from Tsinghua University, China in 1983, and the M.S. and Ph.D. degrees in electrical engineering from the University of Rochester, NY, USA in 1987 and 1990, respectively.

He joined the School of Electrical and Electronic Engineering, Nanyang Technological University in 1992.  His past research interests include Monte Carlo simulation of photocarrier transport and ultrafast phenomena as well as mixed-mode circuit simulation and CAD tool development.  His current research focuses on the development of compact models for circuit simulation for conventional (bulk/SOI) and emerging (double-gate/nanowire) nanoscale-CMOS as well as III-V/Ge-channel HEMT devices.  He was visiting professor to Stanford University (1997/2001), Hiroshima University (2003), Universiti Teknologi Malaysia (2007), Fudan University (2011/2012), and Tokyo Institute of Technology (2011/2012).  He is the founding chair of the Workshop on Compact Modeling (WCM) in association with the Nano Science and Technology Institute (NSTI) Nanotech Conference since 2002.  He has served as an EDS distinguished lecturer (DL) since 2000, and he has given ~50 lectures to chapters and institutions around the world.

Dr. Zhou is an elected member-at-large of the IEEE Electron Devices Society (EDS) Administrative Committee, chair of the EDS Asia Pacific Subcommittee for Regions/Chapters, and a member of the EDS compact modeling technical committee.  Since 2007, Dr. Zhou has been an editor for the IEEE Electron Device Letters.