Professor Dr. Mohammad Abdul Alim
Counselor
About
Dr. Mohammad Abdul Alim received the M.Phil. and Ph.D. degrees in Electrical and Electronic Engineering from the University of Manchester, Manchester, U.K., in 2012 and 2016, respectively. He is currently a Professor with the Department of Electrical and Electronic Engineering, University of Chittagong, Chittagong, Bangladesh. His current research interests include a microwave and millimeter-wave MMIC design, new technologies/materials of active and passive components for wireless front ends, design and technology of advanced heterojunction microwave circuits and devices, nonlinear device modeling and applications. He is also the Counselor of the IEEE University of Chittagong Student Branch and Senior Member of IEEE
Memberships
- Institution of Engineers, Bangladesh (IEB)
- IEEE (Senior Member)
Honour & Awards
- GAAS Association PhD Fellowship(2015)
- IEEE R8 VCF Grant(2015)
- Bangabandhu Fellowship(2011)
Research Interests
- 3D Monolithic Microwave Integrated Circuits design and technology
- New technologies/materials of active and passive components for wirelessfront ends
- Design and technology of advanced heterojunction microwave circuits and devices
- Fundamentals of power amplifiers design
- Non-linear device modelling and applications
- Optical control of microwave and mm-wave devices and circuits
- THz emitters and detectors for efficient energy harvesiting and imaging applications
Publications
Journals
- Effect of different separation frequencies of the two-tone input signal on the output power of GaN on SiC HEMT
Mohammad Abdul Alim, Mayahsa M. Ali, Christophe Gaquiere
Micro and Nanostructures; Elsevier; page: Volume 177, May 2023, 207547; May 2023 -
Mohammad Abdul Alim; Anwar Jarndal; Christophe Gaquiere; Giovanni Crupi
Journal of Materials Science: Materials in Electronics; Springer Nature; page: 34: 892 (2023); April 2023 -
RF/Linearity figures of merit estimation for GaAs and GaN/SiC-based Nano-HEMTs
Mohammad Abdul Alim, Mayahsa M. Ali and Ali A. Rezazadeh
Micro and Nanostructures; Elsevier; page: 171 (207426); November 2022 -
Performance projection of multi‐bias and nonlinear distortion for gallium arsenides nano‐pHEMT
Mohammad A. Alim, Sadia Sultana, Jannatul Naima, Fahmida S. Jui, Sabrina Alam, Ali A. Rezazadeh
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields; Wiely; page: e3081; November 2022 -
Arnab Barua Niloy, Mayaj Al Razy, Saif Ahmed, Farihatun Jannat, and Mohammad Abdul Alim
Micro and Nanostructures; Elsevier; page: Volume 168, 207305; August 2022 -
Modeling of access resistances and channel temperature estimation for GaN HEMT
Shariful Islam, Mohammad Abdul Alim, Abu Zahed Chowdhury & Christophe Gaquiere
Journal of Thermal Analysis and Calorimetry; Springer; May 2022 -
Jarndal A, Crupi G, Alim MA, Vadalà V, Raffo A, Vannini G.
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields; WIELY; page: e3008; March 2022 -
Thermal-Sensitivity of Microwave pHEMTs Performance: Pre and Post Multilayer Technology
Mohammad Abdul Alim, J. Naima, Ali A RezazadehPhysica Status Solidi (A) Applications and Materials; Wiley; page: 2100290; September 2021 -
Md. Abdul Kaium Khan, Sadia Sultan Urmi, Tasnim Tareq Ferdous, Sakibul Azam, and Mohammad Abdul Alim
SSuperlattices and Microstructures, Volume 156, August 2021, 106946; Elsevier.
- Estimation of channel temperature and thermal sensitivity for a 0.15 μm GaN HEMT
Abu Zahed Chowdhury, Mohammad Abdul Alim, Shariful Islam, Christophe Gaquiere
Microelectronic Engineering; Elsevier; page: 111595; July 2021
- 2‐mm‐gate‐periphery GaN high electron mobility transistors on SiC and Si substrates: A comparative analysis from a small‐signal standpoint
Anwar Jarndal, Mohammad Abdul Alim, Antonio Raffo, and Giovanni Crupi
International Journal of RF and Microwave Computer-Aided Engineering; Wiley; page: e22642; March 2021
- Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures
Mohammad Abdul Alim, Abu Zahed Chowdhury, Shariful Islam, Christophe Gaquiere, and Giovanni Crupi
Electronics (ISSN 2079-9292; CODEN: ELECGJ); MDPI; page: 10(9), 1115; May 2021
- An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology
Mohammad Abdul Alim, Christophe Gaquiere, and Giovanni Crupi
Micromachines (ISSN 2072-666X); MDPI; page: 12(5), 549; May 2021
- High-gain and ultrawide-band graphene patch antenna with photonic crystal covering 96.48% of the terahertz band
Md. Abdul Kaium Khan, Md. Ibrahim Ullah, Mohammad Abdul Alim
Optik – International Journal for Light and Electron Optics 227; Elsevier; page: 166056; February 2021
- Performance analysis of cesium formamidinium lead mixed halide based perovskite solar cell with MoOx as hole transport material via SCAPS-1D
Farihatun Jannat, Saif Ahmed, Mohammad AbdulAlim
Optik – International Journal for Light and Electron Optics 228:166202; ELSEVIER; page: 166202; February 2021
- 2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT
Md. Abdul KaiumKhan, Mohammad Abdul Alim, Christophe Gaquiere
Microelectronic Engineering, Volume 238, 1 February 2021; ELSEVIER; page: 111508; February 2021
- Experimental insight into the third‐order intercepts and nonlinear distortion of GaN HEMTs
Mohammad A. Alim, Mayahsa M. Ali, Christophe Gaquiere
International Journal of RF and Microwave Computer-Aided Engineering; Iely; page: e22513; February 2021
- Measurement‐based analysis of GaAs HEMT technologies: Multilayer D‐H pseudomorphic HEMT versus conventional S‐H HEMT
Mohammad A. Alim, Mayahsa M. Ali, Giovanni Crupi
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields; Wiely; page: e2873; February 2021
- Numerical development of eco-friendly Cs2TiBr6 based perovskite solar cell with all-inorganic charge transport materials via SCAPS-1D
Saif Ahmed, Farihatun Jannat, Md. Abdul Kaium Khan, and Mohammad Abdul Alim
Optik; ELSEVIER; page: Volume 225, January 2021, 165765; January 2021
- Local mismatch and noise investigation for pre and post multilayer pHEMTs
Mohammad A.Alim, I.Jahan, N.J.Nipu, S.Naher, Ali A.Rezazadeh
Current Applied Physics; Elsevier; page: 1314-1320; December 2020
- Experimental insight into the temperature effects on DC and microwave characteristics for a GaAs pHEMT in multilayer 3‐D MMIC technology
Mohammad Abdul Alim, Ali A. Rezazadeh Giovanni Crupi
International Journal of RF and Microwave Computer-Aided Engineering; Wiley; page: e22379; October 2020
- Third-order intercepts and nonlinear distortion level investigation for pre and post multilayer pHEMTs
Mohammad A. Alim and Ali A.Rezazadeh
Solid-State Electronics; Elsevier Ltd; page: Volume 169, page: 1-7; July 2020
- Study of third-order intercepts and nonlinear distortion level for S-H GaAs HEMTs
Mohammad Abdul Alim and A A Rezazadeh
Semiconductor Science and Technology; IOP; July 2020
- High-Performance Graphene Patch Antenna with Superstrate Cover for Terahertz Band Application
Md. Abdul Kaium Khan, Md. Ibrahim Ullah, Rifat Kabir & Mohammad Abdul Alim
Plasmonics; Springer; June 2020
- Temperature Dependence of the Taylor Series Coefficients and Intermodulation Distortion Characteristics of GaN HEMT
MA Alim, MM Ali, AA Rezazadeh, C Gaquiere
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2019; IEEE; page: 39(3):552 – 559; March 2020
- Multibias and temperature dependence of the current‐gain peak in GaN HEMT
Mohammad A. Alim, Muhammad A. Hasan, Ali A. Rezazadeh, Christophe Gaquiere, Giovanni Crupi
International Journal of RF and Microwave Computer-Aided Engineering; Wiley; March 2020
- Uniformity investigation of pHEMTs in 3-D MMICs for pre and post multilayer fabrication
Mohammad A.Alim, T.Begum, Ali A.Rezazadeh
Elsevier; Solid-State Electronics; page: 107685; February 2020
- Graphene patch antennas with different substrate shapes and materials
Md. Abdul Kaium Khan, Towqir Ahmed Shaem and Mohammad Abdul Alim
Optik-International Journal for Light and Electron Optics; Elsevier; February 2020
- Fabrication and Characterization of Thin film Ni-Cr resistors on MMICs
Mohammad Abdul Alim, Ali A Rezazadeh, Peter Kyabaggu and Lokesh Krishnamurthy
Semiconductor Science and Technology; IOP Publishing; page: ab714b; February 2020
- Thermal response and correlation between mobility and kink effect in GaN HEMTs
Mohammad A.Alim, S.Afrin, A.A.Rezazadeh, and C.Gaquiere
Microelectronic Engineering; Elsevier; page: 111148; January 2020
- Uniformity investigation of pHEMTs small-signal parameters for pre and post multilayer fabrication in 3-D MMICs
Mohammad Abdul Alim and Ali A Rezazadeh
Semiconductor Science and Technology; IOPscience; page: ab5779; January 2020
- Extraction of nonlinear Taylor series coefficients for GaN HEMT over multi-bias condition
Mohammad A.Alim, A.Tahsin, A.Rezazadeh, C.Gaquiere
Microelectronics Journal; Elsevier; January 2020
- Analysis of Graphene Based Miniaturized Terahertz Patch Antennas for Single Band and Dual Band Operation
Md. Abdul Kaium Khan, Towqir Ahmed Shaem and Mohammad Abdul Alim
Optik-International Journal for Light and Electron Optics; Elsevier; July 2019
- On the correlation between intermodulation distortion and RF transconductance for microwave GaN HEMT
Mayahsa M Ali, Mohammad Abdul Alim, A. A. Rezazadeh, Christophe Gaquière
Semiconductor Science and Technology; IOPscience; page: ab2395; May 2019
- Thermal Influence on S22 kink behavior of a 0.15-μm gate length AlGaN/GaN/SiC HEMT for microwave applications
MA Alim, AA Rezazadeh, C Gaquière, G Crupi
Semiconductor Science and Technology, 34, aafc78; IOP science; January 2019
- Thermal response for intermodulation distortion components of GaN HEMT for low and high frequency applications
MA Alim, MM Ali, AA Rezazadeh, C Gaquiere
Microelectronic Engineering 209 (15 March 2019), 53-59, 2019; Pergamon; 2019
- Device behaviour and zero temperature coefficients analysis for microwave GaAs HEMT
MA Alim, AA Rezazadeh
Solid-State Electronics 147, 13-18, 2018; Pergamon; 2018
- Investigation of nonlinear distortion in double heterojunction GaAs based pHEMT subject to frequency and temperature
MA Alim, MM Ali, AA Rezazadeh
Solid-State Electronics 146, 44-49, 2018; Pergamon; 2018
- Extrinsic capacitance extraction for GaAs and GaN FETs from low to high temperatures
MA Alim, AA Rezazadeh, C Gaquière, G Crupi
Semiconductor Science and Technology, aacd56, 2018; IOP science; 2018
- Nonlinear distortion analysis for single heterojunction GaAs HEMT with frequency and temperature
MA Alim, MM Ali, AA Rezazadeh
Semiconductor Science and Technology 33 (7), 075002, 2018; IOP science; 2018
- Design and Analysis of Compact MMIC Switches Utilising GaAs pHEMTs in 3D Multilayer Technology
N Haris, P Kyabaggu, MA Alim, AA Rezazadeh
Semiconductor Science and Technology, 2017; IOP science; 2017
- 3-D multilayer monolithic integration of vertical-oriented double-heterojunction GaAs based pHEMT and thermal influence on device parameters
MA Alim, AA Rezazadeh
Solid-State Electronics 132 (June), 24-30, 2017; Pergamon; 2017
- Device Considerations and Characterizations of Pre and Post Fabricated GaAs Based pHEMTs Using Multilayer 3-D MMIC Technology
MA Alim, MM Ali, N Haris, P Kyabaggu, AA Rezazadeh
Semiconductor Science and Technology, 2017; IOPscience; 2017
- Thermal Influence on Multibias Small- and Large-Signal Parameters of GaAs pHEMT Fabricated in Multilayer 3-D MMIC
M A Alim, A Rezazadeh
IEEE Transactions on Electron Devices, 2017; IEEE; 2017
- Multibias and thermal behavior of microwave GaN and GaAs based HEMTs
MA Alim, AA Rezazadeh, C Gaquiere
Solid-State Electronics 126, 67-74, 2016; Pergamon; 2016
- Temperature Effect on DC and Equivalent Circuit Parameters of 0.15-μm Gate Length GaN/SiC HEMT for Microwave Applications
MA Alim, AA Rezazadeh, C Gaquiere
IEEE Transactions on Microwave Theory and Techniques 64 (11), 3483-3491, 2016; IEEE; 2016
- Temperature dependence of the threshold voltage of AlGaN/GaN/SiC high electron mobility transistors
MA Alim, AA Rezazadeh, C Gaquiere
Semiconductor Science and Technology 31 (12), DOI: 10.1088/0268-1242/31/12 …, 2016; IOP science; 2016
- Small signal model parameters analysis of GaN and GaAs based HEMTs over temperature for microwave applications
MA Alim, AA Rezazadeh, C Gaquiere
Solid-State Electronics 119, 11-18, 2016; Pergamon; 2016
- Temperature-dependent DC and small-signal analysis of AlGaAs/InGaAs pHEMT for high-frequency applications
MA Alim, AA Rezazadeh
IEEE Transactions on Electron Devices 63 (3), 1005-1012, 2016; IEEE; 2016
- Thermal characterization of DC and small-signal parameters of 150 nm and 250 nm gate-length AlGaN/GaN HEMTs grown on a SiC substrate
MA Alim, AA Rezazadeh, C Gaquiere
Semiconductor Science and Technology 30 (12), 125005, 2015; IOP science; 2015
- Measurement based study of microwave double channel pHEMT device
Mohammad A Alim & Mayahsa M. Ali
International Journal of Electronics, DOI: 10.1080/00207217.2023.2205169 (2023)
Conference & Research Seminar
- Frequency and Temperature-Based Noise Figure Modeling for GaAs HEMTs
Mohammad Abdul Alim; Tofayel Karim; Imdad Ahmed Jaman; Mayaj Al Razy; Arnab Barua Niloy; Ali A. Rezazadeh
IEEE 3rd Global Conference for Advancement in Technology (GCAT), Bangalore, India; IEEE; October 2022 -
Multi-Bias and Nonlinear Distortion Analysis for GaAs Nano-HEMT: Performance Projection
Mohammad Abdul Alim; Jannatul Naima; Sadia Sultana ; Sabrina Alam; Fahmida Sharmin Jui ; Ali A. Rezazadeh
IEEE Global Conference on Computing, Power and Communication Technologies (GlobConPT); IEEE; September 2022 -
Modeling of Noise Figure for GaAs pHEMTs based on Frequency and Temperature
S M Abu Zahed Chowdhury; Mohammad Abdul Alim; Ali A. Rezazadeh
2nd Asian Conference on Innovation in Technology (ASIANCON); IEEE; August 2022 -
Performance Projection of GaN HEMT: Experimental Verification Using Angelov Model
Refat Uddin Rafi; Famin Rahman Rakib; Mohammad Abdul Alim
International Conference on Advancement in Electrical and Electronic Engineering (ICAEEE); IEEE; page: 1-4; July 2022 -
Performance Prediction of GaN HEMTs Using Angelov and Curtice Models
Famin Rahman Rakib; Refat Uddin Rafi; Mohammad Abdul Alim
2nd International Conference on Advances in Electrical, Computing, Communication and Sustainable Technologies (ICAECT); IEEE; page: 1-4; April 2022 -
Noise Figure Modeling Subject to Frequency and Temperature for AlGaN/GaN HEMTs
Mohammad Abdul Alim; Ali A. Rezazadeh; Christophe Gaquiere
International Conference on Innovations in Science, Engineering and Technology (ICISET); IEEE; February 2022 -
Mohammad A. Alim; I. Jahan; Mayahsa M. Ali; Christophe Gaquiere
2021 3rd International Conference on Sustainable Technologies for Industry 4.0 (STI); IEEE; page: 1-4; December 2021 -
Mohammad Abdul Alim; Christophe Gaquière; Giovanni Crupi
15th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS); IEEE; November 2021 -
Performance Projection of GaN HEMT: Experimental Verification Using Curtice Model
Shariful Islam; Mohammad Abdul Alim; Anika Tahsin; Famin Rahman Rakib Electrical and Electronic Engineering, University of Chittagong, Chittagong, Bangladesh ; Refat Uddin Rafi; Christophe Gaquiere
International Conference on Electronics, Communications and Information Technology (ICECIT); IEEE; page: 1-4; September 2021 -
Saif Ahmed; Farihatun Jannat; Mohammad Abdul Alim
2nd International Conference on Advanced Information and Communication Technology (ICAICT); IEEE; February 2021
- Third Order Notch over Multi-bias and Temperature in GaN and GaAs HEMTs
Mohammad A Alim; Ali A Rezazadeh; Christophe Gaquiere
15th European Microwave Integrated Circuits Conference (EuMIC), 2020; IEEE; page: 277-280; February 2021
- High Performance 5G Microstrip Dipole Antennas for 39 GHz Band
Md. Ibrahim Ullah ; Md. Abdul Kaium Khan ; Rifat Kabir; Mohammad Abdul Alim
2019 IEEE International Conference on Signal Processing, Information, Communication & Systems (SPICSCON); IEEE; April 2020
- Design and Investigation of a Compact 3D MMIC Patch Antenna for mm Wave Applications
H. Bello ; L. Pantoli ; M. A Alim ; A. Rezazadeh
2020 4th Australian Microwave Symposium (AMS); IEEE; April 2020
- Ultra High Efficient 2×1 Graphene Patch Antenna Arrays for Single and Dual Band Operation
Md. Abdul Kaium Khan ; Md Ibrahim Ullah ; Towqir Ahmed Shaem ; Rifat Kabir ; Mohammad Abdul Alim
1st International Conference on Advances in Science, Engineering and Robotics Technology (ICASERT); IEEE; May 2019
- Detailed Study of Zero Temperature Coefficients for Microwave GaAs and GaN FETs
MA Alim, AA Rezazadeh, C Gaquiere
2018 13th European Microwave Integrated Circuits Conference (EuMIC), Madrid, Spain; IEEE; page: 226-229; September 2018
- Anomaly and threshold voltage shifts in GaN and GaAs HEMTs over temperature
MA Alim, AA Rezazadeh, C Gaquiere
Microwave Integrated Circuits Conference (EuMIC), 2017 12th European, Nuremberg, Germany; IEEE; page: 33-36; October 2017
- Anomaly and intrinsic capacitance behaviour over temperature of AlGaN/GaN/SiC and AlGaAs/GaAs HEMTs for microwave application
MA Alim, AA Rezazadeh, N Haris, C Gaquiere
Microwave Integrated Circuits Conference (EuMIC), 2016 11th European, London, UK; IEEE; page: 149-153; October 2016
- Monolithic Integration of Vertical-Oriented Schottky Diode using 0.5 x 200 µm2 GaAs pHEMT for Microwave Limiter Applications
N Haris, PBK Kyabaggu, MA Alim, AA Rezazadeh
Microwave Integrated Circuits Conference (EuMIC), 2016 11th European, London, UK; IEEE; page: 169 -172; October 2016
- 0.25 μm AlGaN/GaN HEMT nonlinearity modelling and characterization over a wide temperature range
Mohammad A Alim, Ali A Rezazadeh, Christophe Gaquiere, Mayahsa M Ali, Norshakila Haris, Peter B Kyabaggu, Yongjian Zhang
2015, 10th European Microwave Integrated Circuits Conference (EuMIC), Paris, France; IEEE; page: 140-143; September 2015
- Analysis of circular polarization of the Quadrifilar Helix Antenna in the presence of ground plane for LEO satellites
M Ahmad, M Amin, AA Khan, MT Azim, MA Alim
2015 European Microwave Conference (EuMC), Paris, France; IEEE; page: 1543-1546; September 2015
- Nonlinearity measurement and analysis of 0.25 µm GaN HEMT over frequency and temperature using two-tone intermodulation distortion
Mohammad A Alim, Ali A Rezazadeh, Christophe Gaquiere, Mayahsa M Ali, Yongjian Zhang, Norshakila Haris, Peter B Kyabaggu
2015 European Microwave Conference (EuMC), Paris, France; IEEE; page: 630-633; September 2015
- Design and realisation of a pHEMT diode MMIC power limiter using 3D GaAs multilayer CPW technology
Peter BK Kyabaggu, Norshakila Haris, Ali A Rezazadeh, Emerson Sinulingga, Mohammad A Alim, Yongjian Zhang
2015 European Microwave Conference (EuMC),Paris, France; IEEE; page: 522-525; September 2015
- Device considerations and characterisations of double-channel GaAs pHEMT Schottky diodes for limiter applications
Norshakila Haris, Peter BK Kyabaggu, Mohammad A Alim, Yongjian Zhang, Ali A Rezazadeh
2015 10th European Microwave Integrated Circuits Conference (EuMIC), Paris, France; IEEE; page: 219-222; September 2015
- Simulation and analysis of InGaP/GaAs DHPTs using eye diagrams for short wavelength optical detection
Yongjian Zhang, Ali A Rezazadeh, Hassan A Khan, Emerson P Sinulingga, Peter B Kyabaggu, Mohammad A Alim
2014 44th European Microwave Conference, Rome, Italy; IEEE; page: 524-527; October 2014
- Thermal characterisation of AlGaN/GaN HEMT on silicon carbide substrate for high frequency application
Mohammad A Alim, Ali A Rezazadeh, Mayahsa M Ali, Emerson P Sinulingga, Peter B Kyabaggu, Yongjian Zhang, Christopher Gaquiere
2014 9th European Microwave Integrated Circuit Conference, Rome, Italy; IEEE; page: 210-213; October 2014
- Design and Investigation of a Compact 3D MMIC Patch Antenna for mm Wave Applications
H. Bello, L. Pantoli, M. A. Alim, and A. Rezazadeh,
2020 4th Australian Microwave Symposium (AMS), 2020
- Measurement and Modeling of GaAs Based Nano-pHEMT: Small Signal to Large Signal Analysis
Md. Shamsul Alam; Mohammad Abdul Alim;Ali A. Rezazadeh
2023 International Conference on Electrical, Computer, and Communication Engineering (ECCE)
Contacts
Email: mohammadabdulalim@cu.ac.bd, mohammadabdulalim@ieee.org
Reseaechgate: https://www.researchgate.net/profile/Mohammad_Alim10