Two-dimensional (2D) materials present unique opportunities for next generation ultra-thin electronics. However, practical 2D devices can only be realized after overcoming key challenges: contact resistance, stable doping, and uniform growth.
In this talk I will highlight the recent research our group has implemented to improve contact and doping in BP and MoS2 transistors.   I will then show our work beyond transistor applications using 2D materials, such as graphene-Cu interconnects and hBN-RRAM, that are promising for three-dimensional integrated electronics.

Speaker(s): Ching-Hua (Fiona) Wang,

Location:
Santa Clara, California