Co-sponsored by: Nanotechnology Council

2D Materials Advantages and Challenges Towards Applications

Tuesday, August 15, 2017

11:30: Networking, Pizza & Drinks; 

Noon — 1pm: Seminar 

Location:

TI Auditorium E1: 2900 Semiconductor Drive. Santa Clara;

speaker:

 Ching-Hua (Fiona) Wang, PhD. Student

 Electrical Engineering Department, Stanford University

ABSTRACT:   Two-dimensional (2D) materials present unique opportunities for next generation ultra-thin electronics. However, practical 2D devices can only be realized after overcoming key challenges: contact resistance, stable doping, and uniform growth.

    In this talk I will highlight the recent research our group has implemented to improve contact and doping in BP and MoS2 transistors.

    I will then show our work beyond transistor applications using 2D materials, such as graphene-Cu interconnects and hBN-RRAM, that are promising for three-dimensional integrated electronics.

 If you have questions or problems with your registration, please contact LincolnBourne@gmail.com

Must Register on eventbrite at:

https://www.eventbrite.com/e/2d-materials-advantages-and-challenges-towards-applications-tickets-34760114438

This event is co-sponsored by IEEE SCV Nanotechnology Council and Young Professionals

Location:
TI Auditorium E1
2900 Semiconductor Drive
Santa Clara, California