IEEE Transactions on Nanotechnology
IEEE

TNANO Article in focus: November 2015

From the November 2015 issue of IEEE Transactions on Nanotechnology

A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process Variation

by Chen, Y.; Sangai, A.; Rogachev, A.; Gholipour, M.; Iannaccone, G.; Fiori, G.; Chen, D.
T-NANO, Vol. 14, Issue 6, pp. 1068 – 1082, November 2015.

 

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Abstract: This paper presents the first parameterized SPICE-compatible compact model of a graphene nano-ribbon field-effect transistor (GNRFET) with doped reservoirs, also known as MOS-type GNRFET. The current and charge models closely match numerical TCAD simulations. In addition, process variation in transistor dimension, line edge roughness, and doping level in the reservoirs are accurately modeled. Our model provides a means to analyze delay and power of graphene-based circuits under process variation, and offers design and fabrication insights for graphene circuits in the future. We show that line edge roughness severely degrades the advantages of GNRFET circuits; however, GNRFET is still a good candidate for low-power applications.

 

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