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Events on December, 2019

Lecture by Dr. Sorin P. Voinigescu, “Towards Monolithic Quantum Computing Processors In Production FDSOI CMOS Technology”

Date: December 12th, 2019

“Towards Monolithic Quantum Computing Processors In Production FDSOI CMOS Technology”

Dr. Sorin P. Voinigescu, University of Toronto

Event Organized By:

Circuits and Systems Society (CASS) of the IEEE Santa Clara Valley Section



6:00 – 6:30 PM Networking & Refreshments
6:30 – 7:45 PM Talk
7:45 – 8:00 PM Q&A/Adjourn

Lecture will be broadcast live on Zoom and recorded. Please register to receive Zoom conference details one day before the event.


Thursday, December 12th, 2019




This presentation will discuss the fundamental concepts and the feasibility of high-temperature (2-4 K) Si and SiGe electron/hole-spin qubits and qubit integrated circuits (ICs) in commercial 22nm FDSOI CMOS technology,. The beneficial aspects of the SiGe channel hole-spin qubit will be emphasized in comparison with its silicon-only electron-spin counterpart. It is also shown that, at 2 K, MOSFETs and cascodes can be operated as quantum dots in the subthreshold region, while behaving as classical MOSFETs and cascodes in the saturation region, suitable for qubits and mm-wave mixed-signal processing circuits, respectively. Challenges in the design and testing of quantum processor units monolithically integrated with readout and mm-wave spin control electronics in commercial 22nm FDSOI CMOS technology, will also be covered. Finally, I will present measurements for full technology characterization at cryogenic temperatures up to 67 GHz.


Sorin P. Voinigescu is a Professor in the Electrical and Computer Engineering Department at the University of Toronto where he holds the Stanley Ho Chair in Microelectronics and is the Director of the VLSI Research Group. He is an IEEE Fellow and an expert on millimeter-wave and 100+Gb/s integrated circuits and atomic-scale semiconductor device technologies. He obtained his PhD degree in Electrical and Computer Engineering from the University of Toronto in 1994 and his M.Sc Degree in Electronics and Telecommunications from the Politechnical Institute of Bucharest in 1984.


QualComm Santa Clara, Building B, 3165 Kifer Road, Santa Clara, CA 95051

Zoom Broadcast:

Lecture will be broadcast live on Zoom and recorded. Please register to receive Zoom conference details one day before the event.

Admission Fee:

All admissions free. Suggested donations to cover food and water:

Non-IEEE: $5, Students (non-IEEE): $3, IEEE Members (not members of CASS or SSCS): $3

Online registration is recommended to guarantee seating.

Enabling Circuits and Technologies for Addressing Some of the 21st Century’s Hard Energy Challenges with Wide Bandgap Semiconductors and Devices

Date: December 5th, 2019

Co-Sponsored Event:

IEEE Silicon Valley Solid-State Circuits Society (SSCS)

IEEE Silicon Valley Circuits and Systems Society (CASS)

“Enabling Circuits and Technologies for Addressing Some of the 21st Century’s Hard Energy Challenges with Wide Bandgap Semiconductors and Devices “

Prof. Srabanti Chowdhury
Electrical Engineering, Stanford University


Promising key applications of electric vehicles, data centers, power management and power delivery to energy consuming high performance chips/SoCs, photovoltaics/solar, robotics, drones, and even routinely used adaptors that hook up our variety of mobility devices to the wall outlets have caused a resurgence in the field of power electronics. In this talk, I’ll discuss how Wide Bandgap Semiconductor (WBG) devices can lead to a more efficient way of realizing power conversion and its delivery. The associated challenges in circuit topologies, driver circuitry, thermal management, and reliability must be overcome to deliver cost-effective solutions at the system level. This is only possible with persistent circuit-device teaming to address key issues. I will give my take on the future devices that are capable of sustaining high voltages and making remarkable progress. The foundational technology of Wide Bandgap (WBG) materials, devices and circuits, particularly GaN, promises low loss, higher frequency operation future converter systems leading to smaller, lighter, and more efficient lower voltage and also high voltage > 600V converters capable of delivering higher power density. Various applications from small drones to electric vehicles can demand a range of power from mW to 100kW. I will also explain how some of these upcoming technologies and circuits can contribute to the field of radio frequency (RF) and mm-Wave resonators and power amplifiers e.g. switched mode power amplifiers. These technologies and devices will feed to circuit designs that will contribute to applications like medical imaging and wireless power transfer and more.


Srabanti Chowdhury (George and Ida Mary Hoover faculty fellow’19, Gabilan fellow ‘19) is an associate professor of Electrical Engineering (EE) at Stanford. Her research focuses on wideband gap (WBG) materials and device engineering for energy efficient and compact system architecture for power electronics, and RF applications. Besides Gallium Nitride, her group is exploring Diamond for various electronic applications. She received her B.Tech in India in Radiophysics and Electronics (Univ. of Calcutta) and her M.S and PhD in Electrical Engineering from University of California, Santa Barbara. She received the DARPA Young Faculty Award, NSF CAREER and AFOSR Young Investigator Program (YIP) in 2015. In 2016 she received the Young Scientist award at the International Symposium on Compound Semiconductors (ISCS). Among her various synergistic activities, she has served over 10 premier conference committees in various capacities- starting with committee member to program committee chairs, and currently serves the IEDM executive committee She is a senior member of IEEE and an invitee by the NAE to the 2019 symposium on Frontiers of Engineering. To date, her work has produced over 5 book chapters, 80 journal papers, 100 conference presentations, and 20 issued patents.

The seminar is FREE and donation is accepted for refreshments (FREE SSCS/CAS members/$2 IEEE members/$5 non-members)
Eventbrite registration is required for everyone to attend the talk.

Register Here!


Texas Instruments Silicon Valley Auditorium 2900 Semiconductor Dr., Building E, Santa Clara, CA 95051 Directions and Map (to locate Building E).

Time: December 05 (Thursday) evening 6:00PM-8:00PM
Networking and Refreshments: 6:00 PM – 6:30 PM
Technical Talk: 6:30 PM – 8:00 PM

State of AI and ML-December 2019

Date: December 3rd, 2019

State of AI and ML-December 2019

Organized by Co-sponsored by CASS

Limited Free passes: You’re invited to State of AI and ML-December 2019 (Dec 3, 2019 – Dec 4, 2019)

Dates: Tue, Dec 3, 2019, 8:00 AM  – Wed, Dec 4, 2019, 5:00 PM PST

Location: SEMI, 673 S Milpitas Blvd, Milpitas, CA 95035

There are a limited number of complementary tickets available right now! Please register at

If you are not able to get a free pass using the above link, you can apply for a free pass here:
Free passes: Interested female attendees as well as Press, our past IEEE/ACM speakers, IEEE/ACM fellows and IEEE life members can apply for a free pass at There are 60 free passes for female attendees for each event with a total number of 120 free passes for female attendees. We are interested in increasing the participation of female attendees. For each event, a set of 20 free passes are enabled by UL, a second set of 20 of free passes are enabled by MINDBODY Inc. and a third set of 20 free passes are enabled by Oracle. We are very thankful to our sponsors.

This is part of a series of regularly planned events to learn about state-of-the-art advances in artificial intelligence (AI) and machine learning (ML) technology. The event is co-sponsored for publicity by local ACM and IEEE chapters.

Visit to see the event details. Entire Program schedule along with speaker bios and talk abstracts can be downloaded here as a PDF at


  • December 2019
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