The first PitchD is arriving!

26 March 2019 – 17.30
Politecnico di Torino – Maxwell Room

The first PitchD – the PhD’s pitch event is going to arrive. Our PhD IEEE Student Members explain to students, collegues and professors their research. For the first event two PhD student from DET and DISAT will present an insight in their work. Join us to listen their PitchD

Embedded Radar Prototyping for Collision Avoidance and Real-Time Localization

Mr. Stefano Bottigliero
Dept. of Electronics (DET), Politecnico di Torino

The purpose of my presentation is to exhibit my present and future work as PhD student in the field of embedded radar system prototyping.
The focus is on the design and prototyping of a collision avoidance system for Automated Guided Vehicles (AGV) based on a Time Of Flight sensor and of a Real Time Localization System (RTLS) based on Ultra Wide Band (UWB) signals. It is shown how these two systems can be used in an integrated Simultaneous Locating and Mapping (SLAM) system.
The presentation then deals with the activity I carried on for automotive radar applications and other radar systems. An overview of the different radar systems developed by the radar group is also presented.

Combined microwave and Eliashberg analysis of the effects of disorder in Iron Based Superconductors

Mr. Daniele Torsello
Dept. of Applied Science (DISAT), Politecnico di Torino
Istituto Nazionale di Fisica Nucleare, Sez. Torino

In this seminar I will present a combined experimental and theoretical approach toward reaching new insights into the mechanisms of superconductivity through the analysis of the effects of disorder in Iron Based Superconductors (IBS). We investigate the critical temperature, penetration depth, quasiparticle conductivity and surface impedance of high-quality IBS single crystals by a planar waveguide resonator
technique, in a cavity perturbation approach. The experimental method and data analysis are described, showing that this technique is reliable for the study of small crystals and, since the measurement technique is non-destructive and does not alter the crystals, the very same samples can be measured before and after irradiation, making the analysis of the effects of additional defects more reliable. The absolute values of the penetration depth are accessible by the experiment, showing a fairly good agreement with literature data.
The experimental data is compared to calculations based on the Eliashberg equations within the s±
 wave model, giving a remarkable agreement. This overall consistency validates the model itself, thus allowing us to estimate parameters that are missing in literature. The calculations are also able to explain in a consistent way the effects of disorder both on the critical temperature and on penetration depth, by suitably accounting for the impurity scattering due to the defects created by irradiation. This combined approach has allowed the identification of the disorder induced s± to s++ order parameter symmetry transition in Rh-doped crystals

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