Abstract

Interstitial trapping by OI (oxygen-inserted) silicon channel results in blocking of boron and phosphorus TED (transient enhanced diffusion) as well as retention of channel boron profiles during the gate oxidation process. The OI layers are also beneficial for achieving USJ (ultra-shallow junctions) with low sheet resistance (Rsh) formed by high-dose implantation and rapid thermal annealing because they reduce dopant diffusion away from the surface and can provide for higher levels of active dopant concentration. The enhanced doping profile control capability is applicable to punch-through stop of advanced CMOS devices and its benefits to 28 nm planar CMOS and bulk FinFET devices projected by TCAD are discussed.