“Nano CMOS Gate Dielectric Engineering” by Professor Hei Wong, City University of Hong Kong, China. IEEE Distinguished Lecturer.

Date:  November 30, 2012 (Friday)
Time:  4:30 pm – 5:15 pm
Venue:  PSDC, 1 Jalan Sultan Azlan Shah, 11900 Bayan Lepas, Penang, Malaysia

Abstract

High-dielectric constant (high-k) material has been considered as the only possible solution for the sub-nanometer thick (silicon oxide equivalent thickness) gate dielectric for future nanoscale CMOS devices. However, because of the fundamental limitations, there are still many issues needed to be solved before bringing this kind of materials into the actual CMOS process. In this talk, the material properties of high-k dielectrics associated with the electronic structures, such as thermal stability, defects and band structures, will be reviewed. Most of the instabilities of high-k materials are associated with the ionic nature of the metal-oxygen bonding. These issues can be resolved by using silicates, oxynitride, aluminates, or other complex forms of compounds or alloys. The physics of, and the issues related to, these types of high-k materials will be presented. The major origins of MOS device instabilities are material interaction between the high-k/silicon substrate and the high-k/metal electrode interfaces. We shall examine the interfacial bonding structure, the bonding strain and relaxation at the high-k/silicon interface. Finally, the impacts of high-k materials on the MOS device operation will be discussed.

Speaker

Hei Wong received his Ph.D. in electrical and electronic engineering from the University of Hong Kong. He joined the faculty of the Department of Electronic Engineering at City University of Hong Kong in 1989 and is currently a full professor of the Department. Dr. Wong was the chair for the IEEE ED/SSC Hong Kong Joint Chapter during 2002-2003. He is a member of the international steering committees, technical program committees, and organizing committees for many international and local conferences. Dr. Wong has served as a Regional Editor for the Microelectronics Reliability journal since 1999 and a Regional Editor for IEEE EDS Newsletter during 2003-2009. He has served as a Distinguished Lecturer for IEEE EDS since 2002. Dr. Wong has worked on MOS device modeling and characterization, hot-electron effects, thin dielectric film physics, IC process modeling and characterization, MOS integrated circuit designs, solid-state sensors, and silicon photonics. He is author or co-author of three books and over 320 papers including over 160 journal papers, dozen journal review papers and has presented many invited talks and keynote speeches at numerous international conferences. He received various awards for his significant contributions in research and professional services.